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| 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 MS1619 RF & MICROWAVE TRANSISTORS CATV-MATV AMPLIFIERS Features * * * * * NPN OVERLAY GEOMETRY CLASS A OPERATION EXCELLENT INTERMODULATION CHARACTERISTICS 40-880 MHz OPERATION COMMON EMITTER CONFIGURATION DESCRIPTION: THE MS1619 IS AN OVERLAY NPN SILICON TRANSISTOR IN A JEDEC TO-39 METAL CASE. THE MS1619 OFFERS EXTREMELY GOOD INTERMODULATION PROPERTIES AND HIGH POWER GAIN. THE DEVICE IS PRIMARILY INTENDED FOR FINAL AND DRIVER STAGES IN CHANNEL AND BAND-AERIAL AMPLIFIERS WITH HIGH OUTPUT POWER FROM 40 TO 880 MHz. ABSOLUTE MAXIMUM RATINGS Symbol VCBO VCER VCEO VEBO IC ICM PDISS T J T STG Parameter Collector-base Voltage (IE=0) Collector-emitter Voltage (RBE 50 ) Collector-emitter Voltage (IB=0) Emitter-base Voltage (IC=0) Collector Current Collector Peak Current Total Power Dissipation at T amb 25C at T case 125C Junction and Storage Temperature Value 40 40 25 3 150 300 0.7 1.5 -65 to 200 Unit V V V V mA mA W W C Thermal Data RTH(J-CASE) RTH(J-AMB) Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max Max 50 250 C/W C/W MSC0925.PDF 10-09-98 MS1619 ELECTRICAL SPECIFICATIONS (Tcase = 25C) (Tcase 25 STATIC Symbol Bvebo Bvcer HFE NF Cob IC = 0.1 mA IC = 5 mA IC = 50 mA IC = 30 mA f =1.0 MHz Test Conditions Min. R=10 VCE=5V VCE=15V VCB=15V 3 40 25 ----- Value Typ. ------6 --- Max. --------4 Unit V V V dB pf f=200 MHz DYNAMIC Symbol Pout f=200 MHz f=200 MHz Test Conditions Min. VCE=15V VCE=15V ICQ=70mA ICQ=70mA 130 --- Value Typ. 150 16 Max. ----- Unit mW dB Gpe MSC0925.PDF 10-09-98 MS1619 PACKAGE MECHANICAL DATA MSC0925.PDF 10-09-98 |
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